Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

被引：71

作者：

Niu Nanhui ^{[1
]}

Wang Huaibing ^{[1
]}

Liu Jianping ^{[1
]}

Liu Naixin ^{[1
]}

Xing Yanhui ^{[1
]}

Han Jun ^{[1
]}

Deng Jun ^{[1
]}

Shen Guangdi ^{[1
]}

机构：

[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 06期

基金：

中国国家自然科学基金;

关键词：

photoluminescence; electroluminescence; atom force microscopy; multiple quantum wells-; nitrides; LED; MOCVD;

D O I：

10.1016/j.sse.2007.04.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN/GaN multiple quantum well (MQW) structures were grown by MOCVD. A strain-relief underlying layer was employed to reduce the strain in the InGaN well layers arising from the large lattice mismatch between InN and GaN. Samples were investigated by photoluminescence (PL), electroluminescence (EL) and atom force microscopy (AFM) to characterize their optical and morphological properties. By inserting an underlying layer, the PL intensity was increased more than three times. Under small injection current (1-15 mA), the blue-shift of EL peak wavelength was decreased from 8 to 1.8 nm, the surface morphology was improved and the density of V-pits was reduced from 14-16 x 10(8) to 2-4 x 10(8)/cm(2). Further, the 20-mA output power was increased by more than 50%. (c) 2007 Published by Elsevier Ltd.

引用

页码：860 / 864

页数：5

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