Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells

被引：99

作者：

Kuroda, T ^{[1
]}

Tackeuchi, A ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 06期

关键词：

D O I：

10.1063/1.1502186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN multiple quantum wells (MQWs) mainly in relation to a quantum-confined Stark effect. We performed a systematic time-resolved photoluminescence measurement of MQWs for various carrier densities and three different well widths (2.5, 4.0, and 5.5 nm). We show that the energy shift and the change in carrier lifetime are explained well by the free carrier screening effect which compensates for the internal electric field. (C) 2002 American Institute of Physics.

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页码：3071 / 3074

页数：4

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