Single electron devices for simulating read-out in a solid state quantum computer

被引:1
作者
Buehler, TM [1 ]
Reilly, DJ
Starrett, RP
Hamilton, AR
Brenner, R
Kenyon, S
Court, N
Dzurak, AS
Clark, RG
机构
[1] Univ New S Wales, Ctr Quantum Comp Technol, Sydney, NSW 2052, Australia
[2] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[3] Univ New S Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia
关键词
quantum effects; electrical transport (conductivity; resistivity; mobility; etc.); metallic surfaces;
D O I
10.1016/S0039-6028(03)00479-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The radio frequency single electron transistor (rf-SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random charging-decharging events associated with traps in the neighboring material system and SET tunnel junctions. Here we present a detection scheme together with experimental data from two dc-SETs where the signals from each are cross-correlated both temporally and spatially to suppress uncorrelated events arising from charge traps in the substrate and oxide. The technique is demonstrated using two dc-SETs that can detect the charge-state of two coupled metal dots, simulating charge transfer and read-out in a two-qubit system. In an effort towards operating the correlated detection scheme on microsecond time-scales, we have demonstrated an ability to detect controlled single electron transfer using an rf-SET. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码:1199 / 1203
页数:5
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