Fullerene Sensitized Silicon for Near- to Mid-infrared Light Detection

被引：22

作者：

Matt, Gebhard J. ^{[1
]}

Fromherz, Thomas ^{[1
]}

Bednorz, Mateusz ^{[1
]}

Zamiri, Saeid ^{[2
]}

Goncalves, Guillaume ^{[3
]}

Lungenschmied, Christoph ^{[4
]}

Meissner, Dieter ^{[5
]}

Sitter, Helmut ^{[1
]}

Sariciftci, N. Serdar ^{[5
]}

Brabec, Christoph J. ^{[4
]}

Bauer, Guenther ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria

[2] Johannes Kepler Univ Linz, Christian Doppler Lab Surface Opt, A-4040 Linz, Austria

[3] ENSCPB, F-33607 Pessac, France

[4] Konarka Austria, A-4040 Linz, Austria

[5] Johannes Kepler Univ Linz, Linz Inst Organ Solar Cells LIOS, A-4040 Linz, Austria

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 05期

关键词：

C-60; FABRICATION; TRANSISTORS; VOLTAGE;

D O I：

10.1002/adma.200901383

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel light-sensing scheme based on a silicon/fullerene-derivative heterojunction allows optoelectronic detection in the near- to mid-infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near-to mid-IR, presumably caused by an interfacial absorption mechanism.

引用

页码：647 / +

页数：5

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