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Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface

被引：6
作者：
Bensliman, F
Aggour, M
Ennaoui, A
Matsumura, M
机构：
[1] Univ Mohammed V, Fac Sci, Phys Mat Lab, Rabat, Morocco
[2] Univ Ibn Tofail, Fac Sci, Phys Mat Condensee Lab, Kenitra, Morocco
[3] Osaka Univ, Res Ctr Photoenerget Organ Mat, Toyonaka, Osaka 5608531, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 12A期
关键词：
silicon surface Si(111) step electrochemistry oxidation;
D O I：
10.1143/JJAP.39.L1206
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, we measured the electrochemical oxidation currents on n-Si(111) surfaces at a potential near the flat-band potential. The current became small when the surface was treated with oxygen-free water, which is effective for Battening the Si(111) surface, before the electrochemical measurement. This current was attributed to the oxidation of Si atoms on step and kink sites, and was concluded to be a good measure of the structural perfection of Si(111) surfaces.
引用
收藏
页码：L1206 / L1208
页数：3
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