FLUORINE-CONTAINING SPECIES ON THE HYDROFLUORIC-ACID ETCHED SILICON SINGLE-CRYSTAL SURFACE

被引:84
作者
TAKAHAGI, T [1 ]
ISHITANI, A [1 ]
KURODA, H [1 ]
NAGASAWA, Y [1 ]
机构
[1] TORAY RES CTR LTD,OTSU,SHIGA 520,JAPAN
关键词
D O I
10.1063/1.347367
中图分类号
O59 [应用物理学];
学科分类号
摘要
The chemical structure and property of fluorine-containing species on the hydrofluoric acid (HF) etched Si surface was examined by use of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The fluorine content on the surface was found to increase with increase of HF concentration. A silicon surface etched by 50% HF has fluorine of 2.6 x 10(14) atoms/cm2 as Si-F. Most of the Si-F boundings are rapidly hydrolyzed to Si-OH by rinsing the wafer in water. Thus prepared Si-OH groups are found to be useful as active sites for chemical modification of the bare silicon single-crystal surface. The Si-F was observed not to influence the oxidation rate of HF etched silicon surface.
引用
收藏
页码:803 / 807
页数:5
相关论文
共 8 条
[1]  
GRAF D, 1989, J VAC SCI TECHNOL A, V7, P808, DOI 10.1116/1.575845
[2]   INVESTIGATIONS ON HYDROPHILIC AND HYDROPHOBIC SILICON (100) WAFER SURFACES BY X-RAY PHOTOELECTRON AND HIGH-RESOLUTION ELECTRON-ENERGY LOSS-SPECTROSCOPY [J].
GRUNDNER, M ;
JACOB, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02) :73-82
[3]   EFFECT OF ORGANIC CONTAMINANTS ON THE OXIDATION-KINETICS OF SILICON AT ROOM-TEMPERATURE [J].
LICCIARDELLO, A ;
PUGLISI, O ;
PIGNATARO, S .
APPLIED PHYSICS LETTERS, 1986, 48 (01) :41-43
[5]   SYNCHROTRON PHOTOEMISSION INVESTIGATION - FLUORINE ON SILICON SURFACES [J].
MORAR, JF ;
MCFEELY, FR ;
SHINN, ND ;
LANDGREN, G ;
HIMPSEL, FJ .
APPLIED PHYSICS LETTERS, 1984, 45 (02) :174-176
[6]   CONTROL OF THE CHEMICAL-REACTIVITY OF A SILICON SINGLE-CRYSTAL SURFACE USING THE CHEMICAL MODIFICATION TECHNIQUE [J].
TAKAHAGI, T ;
ISHITANI, A ;
KURODA, H ;
NAGASAWA, Y ;
ITO, H ;
WAKAO, S .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2187-2191
[7]   THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING [J].
TAKAHAGI, T ;
NAGAI, I ;
ISHITANI, A ;
KURODA, H ;
NAGASAWA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3516-3521
[8]   SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS [J].
WEINBERGER, BR ;
PETERSON, GG ;
ESCHRICH, TC ;
KRASINSKI, HA .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3232-3234