Free carrier and/or exciton trapping by nitrogen pairs in dilute GaP1-xNx -: art. no. 045209

被引：19

作者：

Felici, M

Polimeni, A

Miriametro, A

Capizzi, M

Xin, HP

Tu, CW

机构：

[1] Univ Roma La Sapienza, INFM, I-00185 Rome, Italy

[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.71.045209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of nitrogen pairs have been investigated in dilute GaP1-xNx samples (xless than or equal to0.24%) by excitation photoluminescence (PLE) spectroscopy and by temperature-dependent photoluminescence (PL). PLE spectra show that three channels are mainly responsible for populating N pairs: (i) exciton tunneling from the isolated nitrogen atom level toward energetically shallow N pairs; (ii) capture of a free exciton by all pairs; and (iii) capture of a free electron and subsequent binding of a hole by energetically deep pairs. On this basis, the quenching with increasing temperature of PL lines associated with different N pairs is described quantitatively.

引用

页数：6

共 33 条

[1] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE [J].

ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04) :1136-&

[2] LUMINESCENCE QUENCHING AND THE FORMATION OF THE GAP1-XNX ALLOY IN GAP WITH INCREASING NITROGEN-CONTENT [J].

BAILLARGEON, JN ;

CHENG, KY ;

HOFLER, GE ;

PEARAH, PJ ;

HSIEH, KC .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2540-2542

[3]

Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4

[4] BINDING OF ELECTRONS BY NITROGEN PAIRS IN GAP [J].

BRAND, S ;

JAROS, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (14) :2789-2796

[5] Experimental evidence for N-induced strong coupling of host conduction band states in GaNxP1-x:: Insight into the dominant mechanism for giant band-gap bowing -: art. no. 201303 [J].

Buyanova, IA ;

Izadifard, M ;

Chen, WM ;

Xin, HP ;

Tu, CW .

PHYSICAL REVIEW B, 2004, 69 (20) :201303-1

[6] Radiative recombination mechanism in GaNxP1-x alloys [J].

Buyanova, IA ;

Rudko, GY ;

Chen, WM ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 2002, 80 (10) :1740-1742

[7] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051

[8] Penetration of electronic perturbations of dilute nitrogen impurities deep into the conduction band of GaP1-xNx -: art. no. 161304 [J].

Dudiy, SV ;

Kent, PRC ;

Zunger, A .

PHYSICAL REVIEW B, 2004, 70 (16) :1-4

[9] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1968, 175 (03) :991-&

[10] LOCAL SYMMETRY OF NITROGEN PAIRS IN GAP [J].

GIL, B ;

CAMASSEL, J ;

ALBERT, JP ;

MATHIEU, H .

PHYSICAL REVIEW B, 1986, 33 (04) :2690-2700

← 1 2 3 4 →