Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon

被引:22
作者
Hasunuma, E [1 ]
Sugahara, S [1 ]
Hoshino, S [1 ]
Imai, S [1 ]
Ikeda, K [1 ]
Matsumura, M [1 ]
机构
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 02期
关键词
D O I
10.1116/1.581018
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomic layer epitaxy of silicon has been studied by alternating exposures of atomic hydrogen and SiH2Cl2. An ideal growth rate of 1 monolayer per cycle has been achieved with a wide temperature window from 550 degrees C to 610 degrees C under long SiH2Cl2 residence time and high pressure conditions. These requirements seem to come from the generation of dense SiHCl, the desirable precursor, by gas-phase reaction of SiH2Cl2. (C) 1998 American Vacuum Society.
引用
收藏
页码:679 / 684
页数:6
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