OBSERVATION OF HSICL IN A CHEMICAL VAPOR-DEPOSITION REACTOR BY LASER-EXCITED FLUORESCENCE

被引：52

作者：

HO, P

BREILAND, WG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：125 / 126

页数：2

相关论文

共 17 条

[1] Emission bands of SiCl2 and SnCl2
Asundi, RK
Karim, M
Samuel, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY, 1938, 50 : 581 - 598
[2] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
BAN, VS
GILBERT, SL
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289
[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388
[4] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD SILICON .4. THE SICL4-H2-N2 AND THE SIHCL3-H2-N2 SYSTEM
BLOEM, J
CLAASSEN, WAP
VALKENBURG, WGJN
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) : 177 - 184
[5] PULSED UV LASER RAMAN-SPECTROSCOPY OF SILANE IN A LINEAR-FLOW CHEMICAL VAPOR-DEPOSITION REACTOR
BREILAND, WG
KUSHNER, MJ
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 395 - 397
[6] COLTRIN ME, UNPUB
[7] REACTIONS OF SILANES WITH HALOGENS - CHEMILUMINESCENT PRODUCTS IN ULTRAVIOLET-VISIBLE SPECTRUM
CONNER, CP
STEWART, GW
LINDSAY, DM
GOLE, JL
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (08) : 2540 - 2544
[8] IDENTIFICATION OF 2 BAND SYSTEMS ATTRIBUTED TO SICL2 RADICAL
CORNET, R
DUBOIS, I
[J]. JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1977, 10 (03) : L69 - L71
[9] COUCHET G, 1978, J ELECTROCHEM SOC, V125, P487
[10] CONTROL OF THE VPE LAYER PROPERTIES BY THE CHARACTERISTICS OF THE BOUNDARY-LAYER
DUCHEMIN, JP
BONNET, M
BEUCHET, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1126 - 1129