Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon

被引：22

作者：

Hasunuma, E ^{[1
]}

Sugahara, S ^{[1
]}

Hoshino, S ^{[1
]}

Imai, S ^{[1
]}

Ikeda, K ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.581018

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Atomic layer epitaxy of silicon has been studied by alternating exposures of atomic hydrogen and SiH2Cl2. An ideal growth rate of 1 monolayer per cycle has been achieved with a wide temperature window from 550 degrees C to 610 degrees C under long SiH2Cl2 residence time and high pressure conditions. These requirements seem to come from the generation of dense SiHCl, the desirable precursor, by gas-phase reaction of SiH2Cl2. (C) 1998 American Vacuum Society.

引用

页码：679 / 684

页数：6

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