Electrostatic resonator with second superharmonic resonance

被引：28

作者：

Jin, ZH ^{[1
]}

Wang, YL ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 64卷 / 03期

基金：

中国国家自然科学基金;

关键词：

electrostatic; silicon; resonators; superharmonic resonance; side-wall doping;

D O I：

10.1016/S0924-4247(97)01630-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrostatic resonator is fabricated on single-crystal silicon by micromachining technologies. Side-wail doping is proposed and realized to form an electrical connection from the excitation electrode to the surface of the device. It is found that the second harmonic in the electrostatic force plays an important role in the resonator's response. The resonator can work on second superharmonic resonance (SSHR). The behaviour of the SSHR is compared with that of the normal resonance. The results show that using the SSHR as a signal, instead of the normal resonance, can suppress electrical crosstalk and increase the signal-to-crosstalk ratio. (C) 1998 Elsevier Science S.A.

引用

页码：273 / 279

页数：7

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