Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-level spectroscopy with synchrotron radiation

被引：8

作者：

Jolly, F

Rochet, F

Dufour, G

Grupp, C

Taleb-Ibrahimi, A

机构：

[1] Univ Paris 06, UMR 7614 CNRS, Chim Phys Lab, F-75005 Paris, France

[2] Univ Paris 11, Lab Utilisat Rayonnement Electromagnet, F-91405 Orsay, France

来源：

SURFACE SCIENCE | 2000年 / 463卷 / 02期

关键词：

hydrogen atom; interface states; oxidation; photoelectron spectroscopy; silicon; silicon oxides; synchrotron radiation photoelectron spectroscopy; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(00)00488-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The room temperature oxidation of H-terminated Si(111) surfaces by activated oxygen has been investigated using high resolution (70 meV) Si 2p core-level spectroscopy with synchrotron radiation. The data are compared with previous studies using photoemission spectroscopy and high resolution electron energy loss spectroscopy. The metastability of the oxidized layer formed at room temperature is also examined. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：102 / 108

页数：7

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