Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers

被引:4
作者
Chichibu, SF [1 ]
Sugiyama, M
Nozaka, T
Suzuki, T
Onuma, T
Nakajima, K
Aoyama, T
Sumiya, M
Chikyow, T
Uedono, A
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
[3] JST, ERATO, NICP, Kawaguchi 3320012, Japan
[4] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800854, Japan
[5] NIMS, Tsukuba, Ibaraki 3050047, Japan
[6] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[7] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan
[8] NIMS, COMET, Tsukuba, Ibaraki 3050047, Japan
[9] JST, CREST, Kawaguchi 3320012, Japan
关键词
positron annihilation; metalorganic vapor phase epitaxy (MOVPE); superlattice (SL); cubic GaN; GaAs substrate; nitrides;
D O I
10.1016/j.jcrysgro.2004.08.086
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Effects of AlxGa1-xN/GaN superlattice (SL) insertion on the structural homogeneity, photoluminescence (PL) lifetime, and defect densities were studied in cubic (c-) GaN epilayers on (001) GaAs substrates grown by low-pressure metalorganic vapor-phase epitaxy. Values of the full-width at half-maximum (FWHM) of both the (002) X-ray diffraction peak and near-band-edge excitonic PL peak were decreased by a factor of 2, and the room-temperature PL intensity was improved by a factor greater than 10 through the use of double 15-period 3.8-nm-thick Al0.35Ga0.65N/2.5-nm-thick GaN SL layers between the c-GaN epilayer and the c-GaN template layer prepared on a substrate-decomposition-shielding GaN layer deposited at a low temperature. The density or size of Ga-vacancy (V-Ga)-related defects in the c-GaN epilayer was also significantly reduced, and simultaneous increase in the excitonic PL lifetime at 293 K from approximately 20 ps to 230 ps indicated a tremendous reduction of the nonradiative defect density. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:481 / 488
页数:8
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