Effect of ZnSe/ZnSSe superlattice buffer on improved emission efficiency of ZnCdSe/MgZnSSe quantum wells for MgZnSSe-based blue/green lasers

被引：4

作者：

Ichimura, Y ^{[1
]}

Kishino, K ^{[1
]}

Haraguchi, M ^{[1
]}

Yoshida, A ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECT & ELECTR ENGN,CHIYODA KU,TOKYO 102,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00868-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The room temperature photoluminescence (PL) intensity from ZnCdSe/MgZnSSe single quantum wells (SQWs) was drastically improved as a factor of 20 by introducing ZnSe/ZnSSe superlattice (SL) buffer layers just on the GaAs substrates. As well as that, the PL FWHM was narrowed from 34.0 to 28.9 meV and the atomic force microscope (AFM) observation showed a remarkable improvement in surface roughness. Room temperature pulsed operations of MgZnSSe-based laser diodes with the SL structures were obtained at 535 nm.

引用

页码：586 / 590

页数：5

共 18 条

[1] CONTROL OF DEFECTS IN THE HETEROEPITAXIAL GROWTH OF GAAS ON SILICON [J].

BRADLEY, RR ;

BESWICK, JA ;

JOYCE, TB ;

HODSON, PD ;

KIGHTLEY, P ;

TAYLOR, RI ;

STIRLAND, DJ ;

GRIFFITHS, RJM .

VACUUM, 1990, 40 (04) :339-346

[2] MBE GROWTH OF EXTREMELY HIGH-QUALITY GAAS-ALGAAS GRIN-SCH LASERS WITH A SUPERLATTICE BUFFER LAYER [J].

FUJII, T ;

HIYAMIZU, S ;

YAMAKOSHI, S ;

ISHIKAWA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :776-778

[3] FABRICATION OF II-VI SEMICONDUCTOR QUANTUM-WELL STRUCTURES IN ZNCDSSE ALLOY SYSTEMS [J].

FUJITA, S ;

KAWAKAMI, Y ;

FUJITA, S .

PHYSICA B, 1993, 191 (1-2) :57-70

[4] MICROSTRUCTURE AND PSEUDOMORPHISM IN MOLECULAR-BEAM EPITAXIALLY GROWN ZNCDS ON GAAS(001) [J].

GUHA, S ;

WU, BJ ;

CHENG, H ;

DEPUYDT, JM .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2129-2131

[5] (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

CHENG, H ;

HAASE, MA ;

DEPUYDT, JM ;

QIU, J ;

WU, BJ ;

HOFLER, GE .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :801-803

[6] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

DEPUYDT, JM ;

HAASE, MA ;

QIU, J ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3107-3109

[7] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[8] REMARKABLE IMPROVEMENT IN EMISSION EFFICIENCY OF ZNCDSE/ZN(S)SE LEDS BY THERMAL ANNEALING [J].

ICHIMURA, Y ;

KISHINO, K ;

KURAMOTO, M ;

SATAKE, M ;

YOSHIDA, A .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (03) :171-176

[9]

ISHIBASHI A, 1994, IEEE LEOS

[10] SUPPRESSION OF THREADING DISLOCATION GENERATION IN HIGHLY LATTICE-MISMATCHED HETEROEPITAXIES BY STRAINED SHORT-PERIOD SUPERLATTICES [J].

KAWAI, T ;

YONEZU, H ;

OGASAWARA, Y ;

SAITO, D ;

PAK, K .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2067-2069

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