REMARKABLE IMPROVEMENT IN EMISSION EFFICIENCY OF ZNCDSE/ZN(S)SE LEDS BY THERMAL ANNEALING

被引：6

作者：

ICHIMURA, Y

KISHINO, K

KURAMOTO, M

SATAKE, M

YOSHIDA, A

机构：

[1] Department of Electrical and Electronics Engineering, Sophia University, Tokyo, 102, 7-1 Kioi-cho, Chiyoda-ku

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 03期

关键词：

LIGHT EMITTING DIODE (LED); MGZNSSE; THERMAL ANNEALING; ZNCDSE/ZN(S)SE;

D O I：

10.1007/BF02659891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal annealing effects on optical and electrical characteristics for p-type and n-type II-VI compound layers (ZnSe, ZnSSe, and MgZnSSe) and on the emission efficiency of ZnCdSe/Zn(S)Se 6 quantum well (QW) light emitting diodes (LEDs) grown by molecular beam epitaxy were investigated. It was clarified that serious degradation of optical and electrical characteristics was not observed up to an annealing temperature of 400 degrees C. In the case of p-MgZnSSe, the maximum permitted annealing temperature was lower than that of Zn(S)Se. The light output of the ZnCdSe/Zn(S)Se multi QW LEDs was enhanced by a factor of three at optimum thermal annealing conditions. The study suggests that this thermal effect for LEDs was produced by the improved crystal quality of ZnCdSe QWs by thermal annealing.

引用

页码：171 / 176

页数：6

共 8 条

[1] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[2] ZN1-XCDXSE (X=0.2-0.3) SINGLE-QUANTUM-WELL LASER-DIODES WITHOUT GAAS BUFFER LAYERS [J].

HAYASHI, S ;

TSUJIMURA, A ;

YOSHII, S ;

OHKAWA, K ;

MITSUYU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1478-L1480

[3] BLUE-GREEN INJECTION-LASER DIODES IN (ZN,CD)SE/ZNSE QUANTUM-WELLS [J].

JEON, H ;

DING, J ;

PATTERSON, W ;

NURMIKKO, AV ;

XIE, W ;

GRILLO, DC ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3619-3621

[4] ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES [J].

NAKAYAMA, N ;

ITOH, S ;

OHATA, T ;

NAKANO, K ;

OKUYAMA, H ;

OZAWA, M ;

ISHIBASHI, A ;

IKEDA, M ;

MORI, Y .

ELECTRONICS LETTERS, 1993, 29 (16) :1488-1489

[5] 600-NM-RANGE GAINP/ALINP STRAINED-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

NOMURA, I ;

KISHINO, K ;

KIKUCHI, A ;

KANEKO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :804-810

[6] CHARACTERISTICS OF CL-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHKAWA, K ;

MITSUYU, T ;

YAMAZAKI, O .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3216-3221

[7]

RHODERICK EH, 1988, METAL SEMICONDUCTOR, P189

[8]

WATKINS GD, 1977, RAD EFFECTS SEMICOND, P95

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