600-NM-RANGE GAINP/ALINP STRAINED-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

GaInP strained single quantum well (SSQW) lasers in the 630-710 nm range grown by gas source molecular beam epitaxy (GSMBE) using a novel shutter control method were systematically investigated. A good controllability in strain amount as well as good in-plane compositional homogeneity over 4-cm-long distance of the laser wafers were confirmed. For +1.1% compressive SSQW lasers (708 nm in wavelength), a very low threshold current density (J(th)) Of 175 A/cm(2) was obtained. These facts suggest that the novel shutter control method is very effective for fabricating GaInP SSQW lasers. Furthermore, the post-annealing effect on lasing characteristics of GaInP SSQW lasers was investigated. The increased p carrier density of Be-doped AlInP layers was obtained with the remarkable reduction in J(th) value of 633 nm tensile SSQW lasers from 850 A/cm(2) to 555 A/cm(2)