HIGH-POWER, LOW THRESHOLD, SINGLEMODE 630NM LASER-DIODES

被引：11

作者：

GEELS, RS ^{[1
]}

WELCH, DF ^{[1
]}

SCRIFRES, DR ^{[1
]}

BOUR, DP ^{[1
]}

TREAT, DW ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] XEROX PARC,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Output powers exceeding 45 mW under room temperature, continuous wave operation and threshold currents as low as 30 mA are demonstrated in singlemode AlGaInP visible laser diodes emitting at 636 nm. Singlemode operation is maintained at output powers exceeding 40 mW.

引用

收藏

页码：1810 / 1811

页数：2

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共 8 条

[1] 3W CW LASER-DIODES OPERATING AT 633 NM [J].

GEELS, RS ;

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ELECTRONICS LETTERS, 1992, 28 (11) :1043-1044

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[6] 1W CW, 672NM VISIBLE LASER-DIODES [J].

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ELECTRONICS LETTERS, 1991, 27 (24) :2245-2246

[7] STABLE 30 MW OPERATION AT 50-DEGREES-C FOR STRAINED MQW AIGAINP VISIBLE LASER-DIODES [J].

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ELECTRONICS LETTERS, 1992, 28 (09) :860-861

[8] HIGH-POWER, 8.5W CW, VISIBLE LASER-DIODES [J].

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ELECTRONICS LETTERS, 1991, 27 (21) :1915-1916