3W CW LASER-DIODES OPERATING AT 633 NM

被引：14

作者：

GEELS, RS ^{[1
]}

WELCH, DF ^{[1
]}

SCIFRES, DR ^{[1
]}

BOUR, DP ^{[1
]}

TREAT, DW ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature, continuous wave operation of laser diodes with an emission wavelength of 633 nm at output powers of 900 mW from a single 100-mu-m wide stripe and 3 W from a monolithic 1 cm bar are reported. A threshold current density of 400 A/cm2 and external differential quantum efficiency of 44% were obtained from 100-mu-m wide broad-area lasers.

引用

页码：1043 / 1044

页数：2

共 6 条

[1] HIGH-PERFORMANCE 634NM INGAP/INGAALP STRAINED QUANTUM-WELL LASERS
CHANGHASNAIN, CJ
BHAT, R
KOZA, MA
[J]. ELECTRONICS LETTERS, 1991, 27 (17) : 1553 - 1555
[2] HATAKOSHI G, 1991, J QUANTUM ELECTRON, V27, P1476
[3] HIGHLY RELIABLE 100MW OPERATION OF BROAD AREA INGAALP VISIBLE-LIGHT LASER-DIODES
ITAYA, K
SHIMADA, N
HATAKOSHI, G
[J]. ELECTRONICS LETTERS, 1991, 27 (24) : 2257 - 2259
[4] HIGH-POWER (106 MW) CW OPERATION OF TRANSVERSE-MODE STABILIZED INGAAIP LASER-DIODES WITH STRAINED IN0.62GA0.38P ACTIVE LAYER
NITTA, K
ITAYA, K
NISHIKAWA, Y
ISHIKAWA, M
OKAJIMA, M
HATAKOSHI, G
[J]. ELECTRONICS LETTERS, 1991, 27 (18) : 1660 - 1661
[5] HIGH-POWER, 8.5W CW, VISIBLE LASER-DIODES
WELCH, DF
SCIFRES, DR
[J]. ELECTRONICS LETTERS, 1991, 27 (21) : 1915 - 1916
[6] LOW THRESHOLD CURRENT LASER EMITTING AT 637 NM
WELCH, DF
WANG, T
SCIFRES, DR
[J]. ELECTRONICS LETTERS, 1991, 27 (09) : 693 - 695

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