HIGHLY RELIABLE 100MW OPERATION OF BROAD AREA INGAALP VISIBLE-LIGHT LASER-DIODES

被引：3

作者：

ITAYA, K

SHIMADA, N

HATAKOSHI, G

机构：

[1] Toshiba Corp. Research & Development Center, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 24期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aging characteristics of broad area InGaAlP visible light laser diodes have been investigated. Asymmetric coatings and a highly p-doped cladding layer were employed. Highly reliable operation, as high as 100 mW for more than 2000 h has been realised at 15-degrees-C.

引用

页码：2257 / 2259

页数：3

共 9 条

[1] HATAKOSHI G, 1991, IN PRESS IEEE J QUAN, V27
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[5] HIGHLY RELIABLE TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER-DIODES AT HIGH-POWER OPERATION
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NITTA, K
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ISHIKAWA, M
OKAJIMA, M
HATAKOSHI, G
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (02) : 149 - 151
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[9] HIGH-POWER, VERY LOW THRESHOLD, GAINP/ALGAINP VISIBLE DIODE-LASERS
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CHEN, YC
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[J]. APPLIED PHYSICS LETTERS, 1991, 58 (22) : 2464 - 2466

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