HIGHLY RELIABLE TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER-DIODES AT HIGH-POWER OPERATION

被引：15

作者：

ITAYA, K

ISHIKAWA, M

NITTA, K

OKAJIMA, M

HATAKOSHI, G

机构：

[1] Toshiba Research and Development Center, Saiwai-ku, Kawasaki, 210

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期

关键词：

LASER DIODE; INGAAIP; HIGH POWER; RELIABILITY; COATING;

D O I：

10.1143/JJAP.30.L590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The aging characteristics of transverse-mode stabilized InGaAlP laser diodes at high-power operation above 10 mW have been investigated. A rapid degradation mode related to the inner optical density of the laser was observed. This degradation mode could be effectively suppressed by reducing the inner optical density, adopting an asymmetric facet coating, and with a thinner active layer. Highly reliable operation at a high-power level above 10 mW for more than 1000 hours has been realized.

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页码：L590 / L592

页数：3

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