STABLE 30 MW OPERATION AT 50-DEGREES-C FOR STRAINED MQW AIGAINP VISIBLE LASER-DIODES

被引：9

作者：

UENO, Y

FUJII, H

SAWANO, H

ENDO, K

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba 305

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 09期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed. Marked improvements in threshold current density and characteristic temperature have been demonstrated. Very stable 30 mW operation at 50-degrees-C for more than 1000 h has been achieved for transverse-mode stabilised +0.30% lattice-mismatched MQW LDs. The operating current increase rates are less than 10(-4) h-1.

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收藏

页码：860 / 861

页数：2

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