Direct preparation of crystalline SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition at low temperature

被引：17

作者：

Mitsuya, M ^{[1
]}

Nukaga, N ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Engn Sci, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 8A期

关键词：

strontium bismuth tantalum niobium oxide; low deposition temperature; direct preparation; metalorganic chemical vapor deposition; fatigue-free;

D O I：

10.1143/JJAP.39.L822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline SrBi2(Ta1-xNbx)(2)O-9 (SBTN) thin films with large ferroelectricity were directly prepared on Pt/Ti/SiO2/Si substrates even at 585 degrees C by thermal metalorganic chemical vapor deposition (MOCVD). Thin films mainly consisting of the SBTN phase were obtained even at 585 degrees C. The (103)-oriented film changed to a (001)-oriented one when the deposition temperature increased. The 200-nm-thick film deposited at 585 degrees C had large ferroelectricity, i.e., two times the remanent polarization (2Pr) and two times the coercive field (2Ec) of 12.2 mu C/cm(2) and 160 kV/cm, respectively. When the deposition temperature was increased to 670 degrees C, the 2Pr and 2Ec values increased to 23.8 mu C/cm(2) and 190 kV/cm, respectively.

引用

页码：L822 / L824

页数：3

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