Field emission of a single in-doped ZnO nanowire

被引：89

作者：

Huang, Yunhua

Zhang, Yue ^{[1
]}

Gu, Yousong

Bai, Xuedong

Qi, Junjie

Liao, Qingliang

Liu, Juan

机构：

[1] Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China

[3] Univ Sci & Technol Beijing, State Key Lab ADv Met & Mat, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 26期

关键词：

D O I：

10.1021/jp0666030

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In-doped ZnO nanowires were successfully fabricated by thermal evaporation of a powder mixture of Zn, In2O3, and graphite. Field emission of individual In-doped and pure ZnO nanowire was observed in situ by a transmission electron microscopy. The results show that In-doped ZnO nanowires showed an enhanced field emission properties. First-principle density functional calculations were performed to calculate the electronic structure of the In-doped and pure ZnO in order to explain the observed field emission properties. A two-band field emission mechanics was proposed to explain the enhanced field emission from n-type doping.

引用

收藏

页码：9039 / 9043

页数：5

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