Magnetic frustration behavior of ferroelectric ferromagnet YbMnO3 epitaxial films

被引：10

作者：

Fujimura, N. ^{[1
]}

Takahashi, T. ^{[1
]}

Yoshimura, T. ^{[1
]}

Ashida, A. ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期

关键词：

D O I：

10.1063/1.2713214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

YbMnO3 has an antiferromagnetic (AFM) and field-induced ferromagnetic transitions at 80 and 3 K, respectively. It also exhibits a ferroelectric transition at much higher temperature (similar to 1000 K), making it a rare example of systems having both ferroelectric and ferromagnetic transitions. In the present study, magnetic field induced ferromagnetism of an YbMnO3 epitaxial film was recognized at 80 K, which is much higher temperature than that of single crystal. The magnetic frustration behaviors were also observed below 87 K. Regarding the cross-correlation phenomena, a coupling between the ferroelectric domain switching and the AFM spin ordering is demonstrated using a real multiferroic material, YbMnO3 epitaxial film. (c) 2007 American Institute of Physics.

引用

页数：3

共 13 条

[1]

ARAI R, 2005, T MAT RES SOC JPN, V30, P241

[2] Determination of the magnetic symmetry of hexagonal manganites by second harmonic generation [J].

Fiebig, M ;

Fröhlich, D ;

Kohn, K ;

Leute, S ;

Lottermoser, T ;

Pavlov, VV ;

Pisarev, RV .

PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5620-5623

[3] Spin-rotation phenomena and magnetic phase diagrams of hexagonal RMnO3 [J].

Fiebig, M ;

Lottermoser, T ;

Pisarev, RV .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :8194-8196

[4] Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices [J].

Fujimura, N ;

Azuma, S ;

Aoki, N ;

Yoshimura, T ;

Ito, T .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) :7084-7088

[5] Multiferroic behaviour of YMnO3 and YbMnO3 epitaxial films [J].

Fujimura, N. ;

Shigemitsu, N. ;

Takahashi, T. ;

Ashida, A. ;

Yoshimura, T. ;

Fukumura, H. ;

Harima, H. .

PHILOSOPHICAL MAGAZINE LETTERS, 2007, 87 (3-4) :193-201

[6] Ferromagnetic and ferroelectric behaviors of A-site substituted YMnO3-based epitaxial thin films [J].

Fujimura, N ;

Sakata, H ;

Ito, D ;

Yoshimura, T ;

Yokota, T ;

Ito, T .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6990-6992

[7] Coupling between the ferroelectric and antiferromagnetic orders in YMnO3 [J].

Huang, ZJ ;

Cao, Y ;

Sun, YY ;

Xue, YY ;

Chu, CW .

PHYSICAL REVIEW B, 1997, 56 (05) :2623-2626

[8] Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO3-based metal/ferroelectric/insulator/semiconductor capacitors [J].

Ito, D ;

Fujimura, N ;

Yoshimura, T ;

Ito, T .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :4036-4041

[9] Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors [J].

Ito, D ;

Fujimura, N ;

Yoshimura, T ;

Ito, T .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5563-5567

[10] Dielectric and magnetic anomalies and spin frustration in hexagonal RMnO3 (R = Y, Yb, and Lu) -: art. no. 104419 [J].

Katsufuji, T ;

Mori, S ;

Masaki, M ;

Moritomo, Y ;

Yamamoto, N ;

Takagi, H .

PHYSICAL REVIEW B, 2001, 64 (10)

← 1 2 →