Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors

被引：102

作者：

Ito, D ^{[1
]}

Fujimura, N ^{[1
]}

Yoshimura, T ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Grad Sch Engn, Dept Appl Mat Sci, Osaka 5998531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 09期

关键词：

D O I：

10.1063/1.1564862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric properties of YMnO3 epitaxial films were studied. The ferroelectric properties of epitaxially grown (0001) YMnO3 films on (111)Pt/(0001)sapphire (epi-YMO/Pt) with an excellent crystallinity were compared to (0001)-oriented poly crystalline films on (111)Pt/ZrO2/SiO2/Si. The epi-YMO/Pt had saturated polarization-electric-field (P-E) hysteresis loops, with a remanent polarization (P-r) of 1.7 muC/cm(2) and a coercive field (E-c) of 80 kV/cm. The fatigue property showed no degradation up to 10(10) measured cycles. These results suggested that the YMnO3 epitaxial films were suitable ferroelectric material for the ferroelectric-gate field-effect transistors. Consequently, epitaxially grown (0001)YMnO3 films on epitaxial Y2O3/Si (epi-YMO/Si) were fabricated. The epi-YMO/Si capacitor had almost equivalent crystallinity compared to epi-YMO/Pt. It was recognized that the epi-YMO/Si capacitor exhibited the ferroelectric type C-V hysteresis loop with the width of the memory window of 4.8 V, which was almost identical to the value of twice coercive voltage of the P-E hysteresis loops of the epi-YMO/Pt. A retention time exceeding 10(4) s was obtained in the epi-YMO/Si capacitor. (C) 2003 American Institute of Physics.

引用

页码：5563 / 5567

页数：5

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