Group III - nitride materials for ultraviolet detection applications

被引：10

作者：

Chow, PP ^{[1
]}

Klaassen, JJ ^{[1
]}

VanHove, JM ^{[1
]}

Wowchak, A ^{[1
]}

Polley, C ^{[1
]}

King, D ^{[1
]}

机构：

[1] Blue Lotus Micro Devices Inc, SVT Associates, Eden Prairie, MN 55344 USA

来源：

PHOTODETECTORS: MATERIALS AND DEVICES V | 2000年 / 3948卷

关键词：

ultraviolet photodiode; solar-blind photodiode; gallium nitride; name sensing; UV-B radiometry;

D O I：

10.1117/12.382130

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High performance ultraviolet (UV) detectors have been fabricated using group III- nitride materials grown by molecular beam epitaxy (MBE). GaN PIN detectors exhibit near quantum efficiency limited responsivity, sharp spectral cutoff (3 orders of magnitude drop by 400 nm and near 5 orders of magnitude to visible wavelengths), and high shunt resistance of several hundred mega-ohms for 0.5 mm(2) active area devices. Comparison of PIN and Schottky devices is presented. The capabilities of group m-nitride based ultraviolet (UV) detectors is discussed in relation to suitability in ultraviolet sensing applications such as high temperature flame sensing, W-B solar radiation monitoring, and high intensity UV dosimetry.

引用

页码：295 / 303

页数：9

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