Sub-ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field-Effect Transistors

被引：33

作者：

Clavaguera, Simon ^{[1
]}

Carella, Alexandre ^{[1
]}

Caillier, Laurent ^{[1
]}

Celle, Caroline ^{[1
]}

Pecaut, Jacques ^{[2
]}

Lenfant, Stephane ^{[3
]}

Vuillaume, Dominique ^{[3
]}

Simonato, Jean-Pierre ^{[1
]}

机构：

[1] CEA Grenoble, LITEN, DTNM, F-38054 Grenoble 9, France

[2] CEA Grenoble, INAC, F-38054 Grenoble 9, France

[3] IEMN CNRS, F-59652 Villeneuve Dascq, France

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2010年 / 49卷 / 24期

关键词：

field-effect transistors; nanotechnology; nerve agents; sensors; silicon nanoribbons; WARFARE AGENTS; SENSORS; NANOWIRES; MIMICS; GAAS;

D O I：

10.1002/anie.201000122

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

(Figure Presented) A chemical receptor specific to traces of organophosphorus agents (OPs) has been synthesized and grafted to a silicon nanoribbon field-effect transistor (SiNRFET). X-ray structures illustrate the structural modifications of the receptor upon exposure to nerve agent simulants. A highly sensitive and selective detector of OPs can be obtained by monitoring the Drain-Source current of the SiNR-FET at an optimum back-gate voltage as a function of time. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：4063 / 4066

页数：4

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