Characterization of Ag oxide thin films prepared by reactive RF sputtering

被引：51

作者：

Abe, Y ^{[1
]}

Hasegawa, T ^{[1
]}

Kawamura, M ^{[1
]}

Sasaki, K ^{[1
]}

机构：

[1] Kitami Inst Technol, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

来源：

VACUUM | 2004年 / 76卷 / 01期

关键词：

Ag; Ag2O; sputtering; XRD; XPS; resistivity; reflectance; transmittance;

D O I：

10.1016/j.vacuum.2004.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ag oxide thin films were grown on glass substrates by sputtering an Ag target in an Ar + O-2 mixed gas. Effects Of O-2 flow ratio on resistivity, reflectance and transmittance of the Ag oxide films were studied. Crystal structure and chemical binding state of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. Ag films with a resistivity of 4muOmegacm and a reflectance of 98% were obtained at O-2 flow ratios below 5%. The increase of resistivity and the decrease of reflectance were observed with increasing O-2 flow ratio due to the formation of mixed films of Ag and Ag oxide. Above an O-2 flow ratio of 40%, the transmittance of the films increased and semitransparent Ag2O films with resistivity of an order of 10(8)Omegacm were formed. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1 / 6

页数：6

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