Backside contacted field effect transistor array for extracellular signal recording

被引：34

作者：

Ingebrandt, S

Yeung, CK

Staab, W

Zetterer, T

Offenhäusser, A

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

[2] Inst Microtechnol, D-55129 Mainz, Germany

来源：

BIOSENSORS & BIOELECTRONICS | 2003年 / 18卷 / 04期

关键词：

field effect transistor; backside contact; deep reactive ion etching; gas phase doping; extracellular recording; rat cardiac myocyte;

D O I：

10.1016/S0956-5663(02)00155-0

中图分类号：

Q6 [生物物理学];

学科分类号：

071011 ;

摘要：

A new approach to the design of field-effect transistor (FET) sensors and the use of these FETs in detecting extracellular electrophysiological recordings is reported. Backside contacts were engineered by deep reactive ion etching and a gas phase boron doping process of the holes using planar diffusion sources. The metal contacts were designed to fit on top of the bonding pads of a standard industrial 22-pin DIL (dual inline) chip carrier. To minimise contact resistance, the metal backside contacts of the chips were electroless plated with gold. The chips were mounted on top of the bonding pads using a standard flip-chip process and a fineplacer unit previously described. Rat embryonic myocytes were cultured on these new devices (effective growth area 6 x 6 mm(2)) in order to confirm their validity in electrophysiological recording. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：429 / 435

页数：7

共 25 条

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