Fabrication and electrical characterization of ultrathin crystalline Al2O3 gate dielectric films on Si(100) and Si(111) by molecular beam epitaxy

被引：19

作者：

Shahjahan, M ^{[1
]}

Takahashi, N ^{[1
]}

Sawada, K ^{[1
]}

Ishida, M ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempa Ku, Toyohashi, Aichi 4418580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 12B期

关键词：

crystalline Al2O3; high-kappa dielectric; interface state density (D-it);

D O I：

10.1143/JJAP.41.L1474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication of ultrathin crystalline Al2O3 (equivalent oxide thickness (EOT) = 1.5-2 nm) on Si substrates by molecular beam epitaxy (MBE) and the electrical properties of these films were discussed. In the electrical measurements, a high breakdown field (8-10 MV/cm) and extremely low leakage current density similar to 10(-8) A/cm(2) at a field of 3 MV/cm were obtained. The dielectric constant of these films was calculated from high-frequency C-V measurement and its value was obtained to be 7.5. The interface state density (D-it) at the crystalline Al2O3/Si interface was calculated from quasi-static capacitance-voltage (C-V) measurement and its value was obtained to be 1-3 x 10(11) eV(-1) (.)cm(-2).

引用

页码：L1474 / L1477

页数：4

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