Room-temperature deposited titanium silicate thin films for MIM capacitor applications

High-k titanium silicate (i.e., TiSiO4) thin films of various thicknesses (in the 4.5- to 160-nm range) were successfully deposited by means of a sputter deposition process at room-temperature and integrated into metal-insulator-metal (MIM) capacitors. It is shown that the TiSiO4-based capacitors can exhibit a capacitance density as high as 30 fF/mu m(2) while maintaining low dielectric dispersion and losses. An, excellent voltage linearity was also obtained (alpha similar to 600 ppm/V-2 at 8.2 fF/mu m(2)) together with a high dielectric constant of 16.5 and low leakage current of about 10 nA/cm(2) at 1 MV/cm. Our results thus show that TiSiO4 films constitute a very promising approach for the achievement of high performance MIM capacitors.