BaTi4O9 thin films for high-performance metal-insulator-metal capacitors -: art. no. 112902

The dielectric and electrical properties of a BaTi4O9 film were investigated in order to evaluate its potential use in metal-insulator-metal (MIM) capacitors for rf/mixed signal integrated circuits. A high capacitance density of 4.62 fF/mu m(2) along with a low tan delta of 0.0025 were obtained at 100 kHz. A high capacitance density of 4.12 fF/mu m(2) and a high quality factor of 322 were also achieved at 2 GHz. The leakage current density was approximately 1 nA/cm(2) at +/- 2 V. Small linear and quadratic voltage coefficients of capacitance of 110 ppm/V and 40.05 ppm/V-2, respectively, and a small temperature coefficient of capacitance of -92.157 ppm/degrees C at 100 kHz were obtained. These results demonstrate that the BaTi4O9 film is a good candidate material for MIM capacitors. (c) 2005 American Institute of Physics.