Even-odd effects in magnetoresistance of ferromagnetic domain walls

被引:20
作者
Dzero, M [1 ]
Gor'kov, LP
Zvezdin, AK
Zvezdin, KA
机构
[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[2] Russian Acad Sci, LD Landau Theoret Phys Inst, Moscow 117334, Russia
[3] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
[4] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.67.100402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The difference in the density of states for the spin's majority and minority bands in a ferromagnet changes the electrostatic potential along the domains, introducing discontinuities of the potential at domain boundaries. The value of the discontinuity oscillates with the number of domains. Discontinuity depends on the positions of domain walls, their motion, or the collapse of domain walls in applied magnetic field. Large values of the magnetoresistance are explained in terms of spin accumulation. We suggest a type of domain wall in nanowires made of itinerant ferromagnets, in which the magnetization vector changes without rotation. The absence of transverse magnetization components allows considerable spin accumulation, assuming the spin relaxation length L-S is large enough.
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页数:4
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