Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer -: art. no. 165315

被引：13

作者：

Colton, JS ^{[1
]}

Kennedy, TA ^{[1
]}

Bracker, AS ^{[1
]}

Gammon, D ^{[1
]}

Miller, JB ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.67.165315

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin resonance of localized electrons bound to donors in a specially designed n-GaAs layer has been performed at 236 MHz and 41 mT, using circular polarized light to polarize the electrons and photoluminescence to detect the electronic polarization. The polarization was diminished under the resonance condition. The electronic g factor obtained by this measurement is -0.41+/-0.01. The resonance linewidth of 2 mT corresponds to a spin lifetime of 28 ns. In order to observe the electronic spin resonance, nuclear effects were eliminated by application of rf fields to simultaneously resonate the nuclear spins.

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