Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes

被引：25

作者：

Dimopoulos, T ^{[1
]}

Gieres, G

Wecker, J

Wiese, N

Sacher, MD

机构：

[1] Siemens Aktiengesell, Corp Technol Mat & Micrsyst, D-91052 Erlangen, Germany

[2] Univ Bielefeld, Nanodevice Grp, D-33615 Bielefeld, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 11期

关键词：

D O I：

10.1063/1.1808899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we study Al-oxide-based tunnel junctions with amorphous Co60Fe20B20 and polycrystalline Co90Fe10 ferromagnetic (FM) electrodes. Focus is given on the evolution of the tunnel magnetoresistance and barrier characteristics (resistance-area product, effective thickness, height, and asymmetry) as a function of the annealing temperature up to 400 degreesC. Junctions with two CoFeB electrodes show the largest thermal stability of the tunnel magnetoresistance. Substituting firstly one and then both CoFeB electrodes with CoFe leads to an increasingly faster degradation of the spin-dependent transport upon annealing. The observed differences suggest an improved interface quality between the amorphous FM and the Al oxide. (C) 2004 American Institute of Physics.

引用

页码：6382 / 6386

页数：5

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