A Fullerene derivative as an electron beam resist for nanolithography

We have explored the application of chemical derivatives of C-60 as high-resolution electron beam resists, Facile spin coating was used to produce similar to 100-nm-thick films of a C-60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of similar to 1 mC/cm(2) for 20 keV electrons, an order of magnitude higher than that of C-60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists, Features with widths of 20 nm were produced. (C) 1998 American Institute of Physics.