Precipitation behaviors of Cu and Fe on Frank-type partial dislocations in Czochralski-grown silicon

Precipitation behaviors of Cu and Fe on Frank-type partial dislocations bounding bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron beam-induced-current (EBIC) technique and transmission electron microscopy (TEM). Frank partials in Cu-contaminated specimen do not exhibit an EBIC contrast at room temperature when the specimen is cooled slowly; however, in the Fe-contaminated specimen, they exhibit EBIC contrast at room temperature due to their Fe contamination. The TEM micrograph shows that Cu develops precipitate colonies in the region away from stacking faults and does not precipitate on Frank partials in the specimen. The results indicate that Fe impurity decorates Frank partials more easily than Cu impurity in Si. (C) 1996 American Institute of Physics.