Scaling Properties in Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

被引:28
作者
Ho, Xinning [1 ,2 ]
Ye, Lina [1 ,2 ]
Rotkin, Slava V. [3 ,4 ]
Cao, Qing [5 ]
Unarunotai, Sakulsuk [5 ]
Salamat, Shuaib [6 ]
Alam, Muhammad A. [6 ]
Rogers, John A. [1 ,2 ,5 ,7 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
[4] Lehigh Univ, Ctr Adv Mat & Nanotechnol, Bethlehem, PA 18015 USA
[5] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[6] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA
[7] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
关键词
Carbon nanotube; transistor; radio frequency; gigahertz; quartz; INTEGRATED-CIRCUITS; PHONON-SCATTERING; PERFORMANCE;
D O I
10.1021/nl903281v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmic contacts that exhibit negligible dependence of their resistances on gate voltage. For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response. Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.
引用
收藏
页码:499 / 503
页数:5
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