Development of compound semiconductors for planetary and astrophysics space missions

被引：6

作者：

Owens, A ^{[1
]}

Bavdaz, M ^{[1
]}

Andersson, H ^{[1
]}

Bertuccio, G ^{[1
]}

Gagliardi, T ^{[1
]}

Gostillo, V ^{[1
]}

Lisjutin, I ^{[1
]}

Nenonen, S ^{[1
]}

Peacock, A ^{[1
]}

Sipila, H ^{[1
]}

Tröger, L ^{[1
]}

Zatoloka, S ^{[1
]}

机构：

[1] European Space Agcy, European Space Technol Ctr, Div Astrophys, NL-2200 AG Noordwijk, Netherlands

来源：

X-RAY OPTICS, INSTRUMENTS, AND MISSIONS III | 2000年 / 4012卷

关键词：

compound semiconductors; CdZnTe; GaAs; HgI2; TlBr; X-ray astronomy;

D O I：

10.1117/12.391558

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

We discuss the observational requirements for future X-ray planetary and astrophysics missions and present preliminary laboratory results from our compound semiconductor program. The detectors used in the tests were simple monolithic devices, which are used in conjunction with a detailed material science and technology development program intended to produce near Fano limited, pixilated hard X-ray detectors. In practical terms, this means producing active arrays, comprised of over 10(3) pixels each being of order 100 microns in size, with spectral resolving powers, E/Delta E > 20 at 10 keV and high quantum efficiencies over the energy range 1 to 200 keV. Four materials are currently under study - GaAs, HgI2, TlBr and CdZnTe. In the cases of GaAs and CdZnTe, the detector energy resolution functions are approaching the Fano limit.

引用

页码：225 / 236

页数：12

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