Silicon nanowires grown from Au-coated Si substrate

被引：37

作者：

Xing, YJ

Yu, DP ^{[2
]}

Xi, ZH

Xue, ZQ

机构：

[1] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Mesoscop Phys Natl Lab, Beijing 100871, Peoples R China

[3] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 04期

关键词：

D O I：

10.1007/s00339-002-1912-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 degreesC under an H-2 atmosphere. The nanowires have a length of several tens of a micron and a diameter of 10-20 nm. The growth mechanism of the nanowires was investigated and explained with a solid-liquid-solid model.

引用

页码：551 / 553

页数：3

共 15 条

[1] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].