Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy

被引：691

作者：

Hao, Yufeng ^{[1
]}

Wang, Yingying ^{[2
]}

Wang, Lei ^{[1
]}

Ni, Zhenhua ^{[2
]}

Wang, Ziqian ^{[1
]}

Wang, Rui ^{[1
]}

Koo, Chee Keong ^{[1
]}

Shen, Zexiang ^{[2
]}

Thong, John T. L. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, CICFAR, Singapore 117576, Singapore

[2] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Math & Phys Sci, Singapore 637371, Singapore

来源：

SMALL | 2010年 / 6卷 / 02期

关键词：

electronic structure; graphene; Raman spectroscopy; stacking; SCATTERING; GRAPHITE; DISORDER; FILMS;

D O I：

10.1002/smll.200901173

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Layer number and stacking order of few-layer graphene (FLG) are of particular interest since they directly determine the performance of graphenebased electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of ABstacked FLG from single- to five-layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking electronic structure graphene, Raman spectroscopy, stacking. © 2010 Wlley-VCH Verlag GmbH & Co. KGaA.

引用

页码：195 / 200

页数：6

共 42 条

[11] Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects [J].

Ferrari, Andrea C. .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :47-57

[12] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[13] Spatially resolved raman spectroscopy of single- and few-layer graphene [J].

Graf, D. ;

Molitor, F. ;

Ensslin, K. ;

Stampfer, C. ;

Jungen, A. ;

Hierold, C. ;

Wirtz, L. .

NANO LETTERS, 2007, 7 (02) :238-242

[14] Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene [J].

Grueneis, A. ;

Attaccalite, C. ;

Wirtz, L. ;

Shiozawa, H. ;

Saito, R. ;

Pichler, T. ;

Rubio, A. .

PHYSICAL REVIEW B, 2008, 78 (20)

[15] Raman scattering from high-frequency phonons in supported n-graphene layer films [J].

Gupta, A. ;

Chen, G. ;

Joshi, P. ;

Tadigadapa, S. ;

Eklund, P. C. .

NANO LETTERS, 2006, 6 (12) :2667-2673

[16] Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene [J].

Hass, J. ;

Varchon, F. ;

Millan-Otoya, J. E. ;

Sprinkle, M. ;

Sharma, N. ;

De Heer, W. A. ;

Berger, C. ;

First, P. N. ;

Magaud, L. ;

Conrad, E. H. .

PHYSICAL REVIEW LETTERS, 2008, 100 (12)

[17] Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy [J].

Huang, Mingyuan ;

Yan, Hugen ;

Chen, Changyao ;

Song, Daohua ;

Heinz, Tony F. ;

Hone, James .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2009, 106 (18) :7304-7308

[18] Large-scale pattern growth of graphene films for stretchable transparent electrodes [J].

Kim, Keun Soo ;

Zhao, Yue ;

Jang, Houk ;

Lee, Sang Yoon ;

Kim, Jong Min ;

Kim, Kwang S. ;

Ahn, Jong-Hyun ;

Kim, Philip ;

Choi, Jae-Young ;

Hong, Byung Hee .

NATURE, 2009, 457 (7230) :706-710

[19] Massless fermions in multilayer graphitic systems with misoriented layers: Ab initio calculations and experimental fingerprints [J].

Latil, Sylvain ;

Meunier, Vincent ;

Henrard, Luc .

PHYSICAL REVIEW B, 2007, 76 (20)

[20] Probing the electronic structure of bilayer graphene by Raman scattering [J].

Malard, L. M. ;

Nilsson, J. ;

Elias, D. C. ;

Brant, J. C. ;

Plentz, F. ;

Alves, E. S. ;

Castro Neto, A. H. ;

Pimenta, M. A. .

PHYSICAL REVIEW B, 2007, 76 (20)

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