Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

被引：28

作者：

Abramo, A ^{[1
]}

Cardin, A ^{[1
]}

Selmi, L ^{[1
]}

Sangiorgi, E ^{[1
]}

机构：

[1] Univ Udine, DIEGM, I-33100 Udine, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 10期

关键词：

device simulation; quantum effects; Schrodinger equation;

D O I：

10.1109/16.870562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A solver for the two-dimensional (2-D) Schrodinger equation based on the k-space representation of the solution has been developed and applied to the simulation of 2-D electrostatic quantum effects in nano-scale MOS transistors, This paper presents the mathematical framework of the simulator, addresses the related accuracy and efficiency problems, and discusses the simulations performed to validate it. Furthermore, the 2-D quantum effects observed in the simulation of charge densities in tens-hundreds nanometer scale MOS structures are described.

引用

页码：1858 / 1863

页数：6

共 22 条

[1]

Abou-Elnour A., 1995, Simulation of Semiconductor Devices and Processes. Vol.6, P178

[2]

[Anonymous], 1990, LAPACK PORTABLE LINE

[3] AN ANALYTICAL APPROXIMATION FOR THE FERMI-DIRAC INTEGRAL F3/2(ETA) [J].