Analysis of quantum effects in nonuniformly doped MOS structures

被引：12

作者：

Fiegna, C ^{[1
]}

Abramo, A

机构：

[1] Univ Ferrara, Dipartimento Ingn, I-44100 Ferrara, Italy

[2] Univ Modena, Dipartimento Fis, INFM, I-41100 Modena, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

MOS devices; quantization; silicon;

D O I：

10.1109/16.662794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents results from the self-consistent solution of Schordinger and Poisson equations obtained in one-dimensional (1-D) nonuniformly doped MOS structures suitable for the fabrication of very short transistors, Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultrashort MOSFET's.

引用

页码：877 / 880

页数：4

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