Mobility simulation of a novel Si/SiGe FET structure

被引：10

作者：

Abramo, A

Bude, J

Venturi, F

Pinto, MR

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV PARMA,DEPT INFORMAT TECHNOL,I-43100 PARMA,ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 02期

关键词：

D O I：

10.1109/55.484123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The theoretical study of a novel Si/SiGe structure combining the advantages of buried channel MOS devices and conventional SiGe FET's is presented, A self-consistent one-dimensional Schrodinger-Poisson simulator has been developed to evaluate the gate dependence of electron effective mobility ire the zero-field limit, Room temperature peak mobility values greater than 2800 cm(2)/V s are predicted, The proposed structure shows also good turn-on characteristic and linear transconductance behavior, which represents a significant feature in view of possible technology applications.

引用

收藏

页码：59 / 61

页数：3

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