Photo-Leakage Current of Zinc Oxide Thin-Film Transistors

被引：15

作者：

Kamada, Yudai ^{[1
]}

Fujita, Shizuo ^{[1
]}

Hiramatsu, Takahiro ^{[2
]}

Matsuda, Tokiyoshi ^{[2
]}

Nitta, Hiroshi ^{[2
]}

Furuta, Mamoru ^{[2
]}

Hirao, Takashi ^{[2
]}

机构：

[1] Kyoto Univ, Grad Sch Engn, Nishikyo Ku, Kyoto 6158520, Japan

[2] Kochi Univ Technol, Res Inst Nanodevices, Kochi 7828502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 03期

基金：

日本学术振兴会;

关键词：

ZNO TFTS;

D O I：

10.1143/JJAP.49.03CB03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origin of photo-leakage current of zinc oxide thin-film transistors (ZnO TFTs) under light irradiation was investigated using a light shield technique. The irradiation position dependence revealed that the effect of light irradiation is much stronger near the source region in the channel than near the drain region. This can be explained by the enhanced carrier injection from the source electrode. The irradiation near the drain region, on the other hand, simply induced photocurrent, which is much smaller than the carrier injection on the source side. Therefore, completely transparent ZnO TFTs under visible light irradiation will be obtained, if the carrier injection from the source electrode is successfully suppressed. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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