Soft UV-NIL at 20 nm scale using flexible bi-layer stamp casted on HSQ master mold

被引：43

作者：

Cattoni, Andrea ^{[1
]}

Cambril, E. ^{[1
]}

Decanini, D. ^{[1
]}

Faini, G. ^{[1
]}

Haghiri-Gosnet, A. M. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 5-8期

关键词：

Nanoimprint; Soft UV-NIL; Hydrogen-silsesquioxane; ELECTRON-BEAM LITHOGRAPHY; HYDROGEN SILSESQUIOXANE; NANOIMPRINT LITHOGRAPHY; IMPRINT LITHOGRAPHY; FABRICATION;

D O I：

10.1016/j.mee.2009.11.106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a comparative study of two e-Beam Lithography (EBL) processes for Nanoimprinting Lithography (NIL) master mold, i.e. the standard PMMA based EBL Si patterning process and the HSQ process. 20 nm features with minimal sidewall roughness and high uniformity are demonstrated on large surface by using HSQ process. Moreover, to validate this ultra-high resolution HSQ EBL process and to check NIL resolution performances, soft UV-NIL replications were performed using soft hard-PDMS/PDMS bi-layer stamps casted on the HSQ master mold. We demonstrate the replication of sub-20 nm nanodots of high density (pitch 60 nm) with a good uniformity on the whole field area. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1015 / 1018

页数：4

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