Deposition and growth with desorption in molecular-beam epitaxy

被引：13

作者：

Pimpinelli, A

Peyla, P

机构：

[1] Inst Max Von Laue Paul Langevin, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, CNRS, Lab Phys & Modelisat Milieux Condenses, F-38042 Grenoble, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 183卷 / 03期

关键词：

film growth; MBE; desorption; growth rate; II-VI;

D O I：

10.1016/S0022-0248(97)00435-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate a model for epitaxial film growth by particle deposition that takes into account the diffusion, aggregation and possible evaporation of the particles deposited on the surface. We find that particle evaporation can dramatically affect the growth velocity of the film, as it is experimentally observed for (0 0 1) CdTe. Puzzling features of these experiments are given a simple explanation. A model for CdTe growth is presented, and quantitative agreement is found with experimental data. Our results are obtained by extensive computer simulations as well as through a simple analytic scaling approach. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：311 / 322

页数：12

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