A theory for semiconductor nanostructure reactivity to gas environment

被引：6

作者：

Ninno, D

Iadonisi, G

Buonocore, F

Cantele, G

Di Francia, G

机构：

[1] Univ Naples Federico II, INFM, Complesso Univ Monte S Angelo, I-80126 Naples, Italy

[2] Univ Naples Federico II, Dipartimento Sci Fis, Complesso Univ Monte S Angelo, I-80126 Naples, Italy

[3] ENEA, CRIF Loc Granatello, I-80055 Portici, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 68卷 / 1-3期

关键词：

nanostructure reactivity; semiconductor; gas sensors;

D O I：

10.1016/S0925-4005(00)00441-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A theoretical model has been developed to link the nanostructure geometry of porous silicon to its optical properties. Light emission and absorption energies have been calculated within a variational scheme, which includes a position-dependent boundary condition that reflects the surface chemistry. We show that the results of our measurements of both the photoluminescence (PL) quenching and peak position shift in the presence of oxygen can be accounted for by the theory. The model can be considered as a first building block of a general theory governing the functioning of semiconductor nanostructure-based gas sensors. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：17 / 21

页数：5

共 13 条

[1] RESEARCH OPPORTUNITIES ON CLUSTERS AND CLUSTER-ASSEMBLED MATERIALS - A DEPARTMENT OF ENERGY, COUNCIL ON MATERIALS SCIENCE PANEL REPORT [J].