Diameter Dependence of the Wurtzite-Zinc Blende Transition in InAs Nanowires

被引:125
作者
Johansson, J. [1 ]
Dick, K. A. [1 ,2 ]
Caroff, P. [3 ]
Messing, M. E. [1 ]
Bolinsson, J. [1 ]
Deppert, K. [1 ]
Samuelson, L. [1 ]
机构
[1] Lund Univ, S-22100 Lund, Sweden
[2] Lund Univ, S-22100 Lund, Sweden
[3] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France
关键词
LIQUID-SOLID MECHANISM; GROWTH; SUPERLATTICES; NUCLEATION;
D O I
10.1021/jp910821e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate that the crystal structure of InAs nanowires call be controlled with nanowire diameter and growth temperature. At small diameters, the nanowires exhibit a wurtzite Structure. As the diameter is increased, there is a crossover to the zinc blende structure. The crossover is less sharp at lower growth temperature and L, the crossover diameter decreases as the growth temperature is increased. We explain these results with classical nucleation theory. The strong diameter dependence is accounted for by including the Gibbs-Thomson effect in the chemical potential.
引用
收藏
页码:3837 / 3842
页数:6
相关论文
共 33 条
[21]   Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires [J].
Johansson, Jonas ;
Karlsson, Lisa S. ;
Dick, Kimberly A. ;
Bolinsson, Jessica ;
Wacaser, Brent A. ;
Deppert, Knut ;
Samuelson, Lars .
CRYSTAL GROWTH & DESIGN, 2009, 9 (02) :766-773
[22]   Catalytic growth of nanowires: Vapor-liquid-solid, vapor-solid-solid, solution-liquid-solid and solid-liquid-solid growth [J].
Kolasinski, Kurt W. .
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2006, 10 (3-4) :182-191
[23]   Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods [J].
Leitsmann, R. ;
Bechstedt, F. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (06)
[24]   Size-selected gold nanoparticles by aerosol technology [J].
Magnusson, MH ;
Deppert, K ;
Malm, JO ;
Bovin, JO ;
Samuelson, L .
NANOSTRUCTURED MATERIALS, 1999, 12 (1-4) :45-48
[25]  
Markov I. V., 1995, CRYSTAL GROWTH BEGIN
[26]   Solid-phase diffusion mechanism for GaAs nanowire growth [J].
Persson, AI ;
Larsson, MW ;
Stenström, S ;
Ohlsson, BJ ;
Samuelson, L ;
Wallenberg, LR .
NATURE MATERIALS, 2004, 3 (10) :677-681
[27]  
PREDEL B, 1998, LANDOLTBORNSTEIN N A, V5
[28]  
SHCHUKIN VA, 2004, NANOSCI TECHNOL, P1
[29]   Nanowire-based one-dimensional electronics [J].
Thelander, C. ;
Agarwal, P. ;
Brongersma, S. ;
Eymery, J. ;
Feiner, L. F. ;
Forchel, A. ;
Scheffler, M. ;
Riess, W. ;
Ohlsson, B. J. ;
Goesele, U. ;
Samuelson, L. .
MATERIALS TODAY, 2006, 9 (10) :28-35
[30]  
Voronkov V. V., 1973, Soviet Physics - Crystallography, V17, P807