Nanowire-based one-dimensional electronics

被引:610
作者
Thelander, C.
Agarwal, P.
Brongersma, S.
Eymery, J.
Feiner, L. F.
Forchel, A.
Scheffler, M.
Riess, W.
Ohlsson, B. J.
Goesele, U.
Samuelson, L.
机构
[1] Lund Univ, S-22100 Lund, Sweden
[2] Philips Res Leuven, B-3001 Louvain, Belgium
[3] IMEC, B-3001 Louvain, Belgium
[4] CEA, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France
[5] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[6] Univ Wurzburg, D-97074 Wurzburg, Germany
[7] Delft Univ Technol, Kavli Inst Neurosci, NL-2600 GA Delft, Netherlands
[8] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
[9] Qumat Technol AB, S-22224 Lund, Sweden
[10] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
D O I
10.1016/S1369-7021(06)71651-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires(1) in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers.
引用
收藏
页码:28 / 35
页数:8
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